Unselective regrowth buried heterostructure long-wavelength superluminescent diode realized with MOVPE

A novel unselective regrowth buried heterostructure (BH) long-wavelength superluminescent diode (SLD), which has a grade-strained bulk InGaAs active region, was developed by metalorganic vapor-phase epitaxy (MOVPE). The 3 dB emission spectrum bandwidth of the SLD is about 65 nm with the range from 1...

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Bibliographic Details
Published in:Journal of luminescence 2007-01, Vol.122, p.176-178
Main Authors: Ding, Ying, Zhou, Fan, Chen, Wei-xi, Wang, Wei
Format: Article
Language:English
Subjects:
Buried heterostructure (BH)
Grade-strained bulk InGaAs
Superluminescent diode (SLDs)
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Summary:A novel unselective regrowth buried heterostructure (BH) long-wavelength superluminescent diode (SLD), which has a grade-strained bulk InGaAs active region, was developed by metalorganic vapor-phase epitaxy (MOVPE). The 3 dB emission spectrum bandwidth of the SLD is about 65 nm with the range from 1596 to 1661 nm at 90 mA and from 1585 to 1650 nm at 150 mA.An output power of 3.5 mW is obtained at 200 mA injection current under CW operation at room temperature.
ISSN:0022-2313
1872-7883
DOI:10.1016/j.jlumin.2006.01.077