Deep level and photoluminescence studies of Er-implanted GaN films

Deep level transient spectroscopy measurements were performed on the metal organic chemical vapor deposition epitaxially grown GaN before and after the implantation with Er. Only one deep level located at 0.270 eV below the conduction band was found in the as-grown GaN films. But four defect levels...

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Bibliographic Details
Published in:Journal of luminescence 2007, Vol.122, p.365-367
Main Authors: Song, S.F., Chen, W.D., Hsu, C.C., Xu, Xurong
Format: Article
Language:English
Subjects:
Deep level
GaN
Photoluminescence
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Summary:Deep level transient spectroscopy measurements were performed on the metal organic chemical vapor deposition epitaxially grown GaN before and after the implantation with Er. Only one deep level located at 0.270 eV below the conduction band was found in the as-grown GaN films. But four defect levels located at 0.300 , 0.188 , 0.600 and 0.410 eV below the conduction band were found in the Er-implanted GaN films after annealing at 900° for 30 min. The origins of the deep defect levels were discussed. The photoluminescence (PL) properties of Er-implanted GaN thin films were also studied. After annealing at 900° for 30 min in a nitrogen flow, Er-related 1.54μm luminescence peaks could be observed for the Er-implanted GaN sample. Moreover, the energy-transfer and recombination processes of the Er-implanted GaN film were described.
ISSN:0022-2313
1872-7883
DOI:10.1016/j.jlumin.2006.01.191