Effect of anodization time on photoluminescence of porous thin SiC layer grown onto silicon

A porous SiC (PSC) layer was fabricated by anodization of a 1.6 μm thin SiC layer deposited onto p-type Si(1 0 0) substrate by pulsed laser deposition (PLD), using a hot-pressed 6H-SiC( p) as sputtered target. p-Type PSC layers were fabricated by anodization in HF/ethylene glycol electrolyte (1:1 by...

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Bibliographic Details
Published in:Journal of luminescence 2007-10, Vol.126 (2), p.561-565
Main Authors: Keffous, A., Bourenane, K., Kechouane, M., Gabouze, N., Kerdja, T., Guerbous, L., Lafane, S.
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Exact sciences and technology
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Photoluminescence
Physics
PLD
Porous materials
PSC
Silicon
Silicon carbide
Thin layer
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Summary:A porous SiC (PSC) layer was fabricated by anodization of a 1.6 μm thin SiC layer deposited onto p-type Si(1 0 0) substrate by pulsed laser deposition (PLD), using a hot-pressed 6H-SiC( p) as sputtered target. p-Type PSC layers were fabricated by anodization in HF/ethylene glycol electrolyte (1:1 by vol.) at different etching times. The properties of the PSC layer formed by this method were investigated by X-ray diffraction (XRD), secondary ion mass spectrometry (SIMS), scanning electron microscopy (SEM) and photoluminescence (PL). The results show, that the growth layer was crystalline and PL spectra exhibit blue band emission centered at 2.95 eV. In addition, the results indicate clearly an increase in PL intensity by ten times of magnitude compared to that exhibited by the unetched sample.
ISSN:0022-2313
1872-7883
DOI:10.1016/j.jlumin.2006.10.024