Temperature dependence of excitonic emission in cubic CdSe thin film

A detailed photoluminescence investigation of the thermal redshift and broadening of the excitonic line of cubic CdSe film grown by molecular beam epitaxy is presented. Free excitonic emission from the cubic CdSe film was observed at low temperature. Temperature-dependent measurement was performed t...

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Bibliographic Details
Published in:Journal of luminescence 2008, Vol.128 (1), p.123-128
Main Authors: Chia, C.H., Yuan, C.T., Ku, J.T., Yang, S.L., Chou, W.C., Juang, J.Y., Hsieh, S.Y., Chiu, K.C., Hsu, J.S., Jeng, S.Y.
Format: Article
Language:English
Subjects:
Cadmium selenide
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Exact sciences and technology
Exciton binding energy
Exciton–phonon interaction
Ii-vi semiconductors
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Optical properties of specific thin films
Photoluminescence
Physics
Temperature dependence
Thin film
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Summary:A detailed photoluminescence investigation of the thermal redshift and broadening of the excitonic line of cubic CdSe film grown by molecular beam epitaxy is presented. Free excitonic emission from the cubic CdSe film was observed at low temperature. Temperature-dependent measurement was performed to obtain material parameters related to exciton–phonon interaction by fitting the experimental data to the phenomenological model. The relative contribution of both acoustic and optical phonon to the band gap shrinkage and exciton linewidth broadening are discussed. Exciton binding energy of 16±1.5 meV was determined from the Arrhenius analysis.
ISSN:0022-2313
1872-7883
DOI:10.1016/j.jlumin.2007.06.003