Study on the electroluminescence properties of the p-NiMgO:Li/MgO/n-ZnO nanowires/ITO heterojunction

We fabricated a p-NiMgO:Li/MgO/n-ZnO NWs/ITO heterojunction device and studied its electroluminescence characteristics. Emission from n-ZnO was observed under forward biases. Significantly the random lasing was achieved. Besides, to investigate the characteristics of NiMgO:Li material, we carried ou...

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Bibliographic Details
Published in:Journal of luminescence 2017-07, Vol.187, p.486-491
Main Authors: Chu, Xianwei, Zhuang, Shiwei, Chi, Chen, Xu, Heng, Du, Guotong, Dong, Xin, Yin, Jingzhi
Format: Article
Language:English
Subjects:
Electroluminescence characteristics
MOCVD
NiMgO:Li thin films
p‐NiMgO:Li/MgO/n‐ZnO NWs/ITO heterojunction
Radio-frequency magnetron sputtering
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Summary:We fabricated a p-NiMgO:Li/MgO/n-ZnO NWs/ITO heterojunction device and studied its electroluminescence characteristics. Emission from n-ZnO was observed under forward biases. Significantly the random lasing was achieved. Besides, to investigate the characteristics of NiMgO:Li material, we carried out a comparative study on NiMgO:Li and NiO:Li. The p-NiMgO:Li thin films were deposited on c-sapphire substrates by radio-frequency magnetron sputtering using high-purity NiO and MgO ceramic targets. Although, the hole concentration of NiMgO:Li thin film was low compared with the NiO:Li thin film, the electronic mobility and the optical transmittance have obviously improvements.
ISSN:0022-2313
1872-7883
DOI:10.1016/j.jlumin.2017.03.060