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Synthesis, characterization and UV photodetector application of Sb-doped ZnO nanowires
Sb-doped ZnO nanowires with hexagonal wurtzite structures have been synthesized via chemical vapor deposition method, and the main charge state of Sb dopants is Sb5+. The photoluminescence spectra demonstrate the existence of shallow acceptors, SbZn-2VZn complexes in all probability. On the other ha...
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Published in: | Journal of luminescence 2020-05, Vol.221, p.117025, Article 117025 |
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Main Authors: | , , , , , , , , |
Format: | Article |
Language: | English |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | Sb-doped ZnO nanowires with hexagonal wurtzite structures have been synthesized via chemical vapor deposition method, and the main charge state of Sb dopants is Sb5+. The photoluminescence spectra demonstrate the existence of shallow acceptors, SbZn-2VZn complexes in all probability. On the other hand, Sb doping caused more native and impurity donors in Sb-doped ZnO nanowires. Then, field effect transistors of single Sb-doped ZnO nanowire were fabricated and the transport properties shows n-type conductivity. The competition between shallow acceptors and donors, and the influence of Sb valency need to be investigated further to obtain stable Sb-doped p-type ZnO. At last, we have shown the potential application of Sb-doped ZnO nanowires for nanoscale UV photodetector.
•Sb-doped ZnO nanowires were synthesized via chemical vapor deposition method.•The as-grown Sb-doped ZnO nanowires have excellent structural and optical qualities.•Sb-doped ZnO nanowire is a promising candidate for nanoscale UV photodetector. |
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ISSN: | 0022-2313 1872-7883 |
DOI: | 10.1016/j.jlumin.2019.117025 |