Excitation-intensity and temperature dependences of photoluminescence in ZnMgO film

Photoluminescence (PL) properties of Zn0.8Mg0.2O film are investigated under high excitation and low temperature. With increasing excitation intensity, emission from the inelastic exciton-exciton scattering gradually dominates, meanwhile the bound exciton emission decreases. The exciton binding ener...

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Bibliographic Details
Published in:Journal of luminescence 2020-10, Vol.226, p.117456, Article 117456
Main Authors: Xu, Chenxiao, Pan, Xinhua, He, Haiping, Ye, Zhizhen
Format: Article
Language:English
Subjects:
Luminescence
Optical materials and properties
Semiconductors
Thin films
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Summary:Photoluminescence (PL) properties of Zn0.8Mg0.2O film are investigated under high excitation and low temperature. With increasing excitation intensity, emission from the inelastic exciton-exciton scattering gradually dominates, meanwhile the bound exciton emission decreases. The exciton binding energy is estimated to be ~110–128 meV from the energy of P-band and PL thermal quenching, much higher than that of bulk ZnO. Temperature-dependent PL spectra reveal a room temperature internal quantum efficiency of 9.2% under high excitation, suggesting a high optical quality of the Zn0.8Mg0.2O film. •Photoluminescence properties of MBE-grown ZnMgO films are first investigated under high excitation intensity.•The exciton binding energy of ZnMgO is estimated as ~110–128 meV, larger than that of ZnO.•The internal quantum efficiency is 9.2%, higher than those values reported in ZnMgO films under low excitation.
ISSN:0022-2313
1872-7883
DOI:10.1016/j.jlumin.2020.117456