Light helicity probed through spin dependent recombination in GaAsN alloys

• Published in: Journal of luminescence 2022-11, Vol.251, p.119163, Article 119163
• Main Authors: Sandoval-Santana, J.C., Ibarra-Sierra, V.G., Carrère, H., Bakaleinikov, L.A., Kalevich, V.K., Ivchenko, E.L., Marie, X., Amand, T., Balocchi, A., Kunold, A.
• Format: Article
• Language: English
• Subjects: Circular polarimetry; GaAsN; Spin-dependent recombination; Spintronics
• ISSN: 0022-2313; 1872-7883
• DOI: 10.1016/j.jlumin.2022.119163

In this paper we briefly review the main experimental and theoretical aspects of the spin-dependent recombination in dilute nitride GaAsN point interstitial defects leading to a large contrast between the photoluminescence intensity under circularly and linearly polarized light excitations as well as to the implementation of a chiral photodetector. We discuss the interplay of the spin-selective capture of free electrons in deep paramagnetic Ga2+ interstitial defects and the hyperfine coupling among the defect nucleus and the bound electron. These factors combined confer GaAsN the capability of discriminating the handedness of an incident light beam. •This circular polarimeter has a simple architecture and can be integrated into standard microelectronics.•The polarimeter exploits the spin-dependent capture of electrons to induce circular polarization-sensitive photocurrents.•The paramagnetic centers in the polarimeter allow the discrimination of handedness of the incident light at room temperature.•A machine learning algorithm is used to convert the photoconductivity signals into power intensity and polarization degree.