Threading dislocation and lattice stress modulation of Si based GaN material with AlPN nucleation layer

• Published in: Journal of luminescence 2023-11, Vol.263, p.120016, Article 120016
• Main Authors: Liu, Wenjun, Zhang, Yachao, Zhang, Jincheng, Yao, Yixin, Wang, Baiqi, Ma, Jinbang, Chen, Kai, Hao, Yue
• Format: Article
• Language: English
• Subjects: AlPN; Dislocation; MOCVD; Si based GaN
• ISSN: 0022-2313; 1872-7883
• DOI: 10.1016/j.jlumin.2023.120016

An innovative AlPN nucleation layer is proposed for the growth of high quality GaN on Si. AlPN nucleation layer is prepared on Si substrate by metal organic chemical vapor deposition to explore the stress and dislocation adjustment mechanism. It is found that there are stress-related antisite defects in the P-doped lattice. In addition, the incorporation of P makes the dislocation densities of screw dislocations and edge dislocations have different trends, which can realize the independent control of the different types of dislocation densities. A hexagonal-cubic-phase mixed structure model is proposed to analyze and explain the variation trends of dislocation densities and stress. This work not only puts forward a new type of nitride material, which provides an idea for the growth of high-quality GaN on Si. On the other hand, it is of great significance to perfect the independent regulation mechanism of dislocations. •An innovative AlPN nucleation layer is proposed for the growth of high quality GaN on Si by MOCVD.•P atoms will occupy different lattice sites, resulting in stress-related antisite defects.•The incorporation of P can independently control the dislocation densities of screw dislocation and edge dislocation.•A hexagonal-cubic-phase mixed structure model is proposed to explain the different variation trends of dislocations.