Nanometer-sized etching of magnetic tunnel junction stack for magnetic random access memory

High-density plasma reactive ion etching of MTJ stack was investigated in an inductively coupled plasma of Cl 2/Ar and Cl 2/O 2/Ar gas mixes. Thin TiN hard mask was employed and the etching proceeded at ambient temperature. The effect of etch gas on the etch profiles of MTJ stack was examined by var...

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Bibliographic Details
Published in:Journal of magnetism and magnetic materials 2006-09, Vol.304 (1), p.e264-e266
Main Authors: Hyun Park, Ik, Ryun Min, Su, Hyun Park, Wang, Ho Shin, Kyung, Chung, Chee Won
Format: Article
Language:English
Subjects:
Inductively coupled plasma reactive ion etching
Magnetic tunnel junction
MRAM
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Summary:High-density plasma reactive ion etching of MTJ stack was investigated in an inductively coupled plasma of Cl 2/Ar and Cl 2/O 2/Ar gas mixes. Thin TiN hard mask was employed and the etching proceeded at ambient temperature. The effect of etch gas on the etch profiles of MTJ stack was examined by varying the gas concentration. In addition, the effects of etch parameters on the etch profiles and magnetic properties of MTJ stacks were investigated. The highly anisotropic etching of MTJ stack arrays with 200×200 and 100×100 nm 2 dimensions was successfully achieved.
ISSN:0304-8853
DOI:10.1016/j.jmmm.2006.01.130