Anomalous Hall effect and ordinary Hall effect in variable range hopping regime of inhomogeneous ferromagnetic semiconductor

• Published in: Journal of magnetism and magnetic materials 2022-11, Vol.562, p.169728, Article 169728
• Main Authors: Zhou, Tie, Qiao, Ruimin, Xu, Tongshuai, Cao, Qiang, Lü, Weiming, Tian, Yufeng, Bai, Lihui, Yang, Wanli, Yan, Shishen
• Format: Article
• Language: English
• Subjects: Anomalous Hall Effect; Impurity energy band; Ordinary Hall effect; Variable range hopping
• ISSN: 0304-8853
• DOI: 10.1016/j.jmmm.2022.169728

Anomalous Hall effect (AHE) and ordinary Hall effect (OHE) in variable range hopping regime of ferromagnetic semiconductor are important for understanding the localized impurity states at different energy levels within the band gap, and provides insight into the specific percolation networks of the thermally excited spin-polarized carriers. Here we report the experiments of both OHE and AHE in Mott and Efros variable range hopping regimes of inhomogeneous In0.27Co0.73O1-v ferromagnetic semiconductor films with the tunable localized electron density and localization length. We found an unusual scaling relation between the AHE coefficient RAH and the longitudinal resistivity ρxx, RAH∝ρxxβ with β>2 , which contrasts the scaling relation of OHE coefficient ROH∝ρxxα with α