X-ray spectroscopy of the valence band electronic structure in high-deposition-rate a-Si:H

The electronic structure of a-Si:H samples prepared by either the expanding thermal plasma (ETP) technique or standard plasma-enhanced chemical vapour deposition (PECVD) has been examined by means of photoemission and X-ray emission spectroscopies. Small changes have been seen only on the s state di...

Full description

Saved in:
Bibliographic Details
Published in:Journal of non-crystalline solids 2004-06, Vol.338, p.240-243
Main Authors: Belin-Ferré, E, Gheorghiu-de La Rocque, A, Fontaine, M.-F, Thirion, J, Brinza, M, Willekens, J, Adriaenssens, G.J
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The electronic structure of a-Si:H samples prepared by either the expanding thermal plasma (ETP) technique or standard plasma-enhanced chemical vapour deposition (PECVD) has been examined by means of photoemission and X-ray emission spectroscopies. Small changes have been seen only on the s state distributions. Particularly, the intensity of a structure present in the gap at about 0.5 eV from the valence band edge varies from the PECVD to the ETP samples. The observed hole mobility differences between the samples prepared by either method do match the differences in the extended character of these defect states in the gap.
ISSN:0022-3093
1873-4812
DOI:10.1016/j.jnoncrysol.2004.02.062