Amorphous Silicon Nitride: a suitable alloy for optical multilayered structures

a-Si1−xNx:H thin films grown by PECVD in a wide compositional range were characterized by spectroscopic ellipsometry and Mach–Zehnder interferometry. Taking advantage from their optical properties, the alloys were fruitfully applied for stratified structures such as distributed Bragg reflectors, con...

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Bibliographic Details
Published in:Journal of non-crystalline solids 2006-06, Vol.352 (9-20), p.1294-1297
Main Authors: Ricciardi, C., Ballarini, V., Galli, M., Liscidini, M., Andreani, L.C., Losurdo, M., Bruno, G., Lettieri, S., Gesuele, F., Maddalena, P., Giorgis, F.
Format: Article
Language:English
Subjects:
Amorphous semiconductors
Amorphous semiconductors
glasses
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Ellipsometry
Exact sciences and technology
Optical properties
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Optical properties of specific thin films
Optical spectroscopy
Physics
Plasma deposition
Silicon
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Summary:a-Si1−xNx:H thin films grown by PECVD in a wide compositional range were characterized by spectroscopic ellipsometry and Mach–Zehnder interferometry. Taking advantage from their optical properties, the alloys were fruitfully applied for stratified structures such as distributed Bragg reflectors, conventional and double resonance optical microcavities.
ISSN:0022-3093
1873-4812
DOI:10.1016/j.jnoncrysol.2005.10.056