Nanostructure in the p-layer and its impacts on amorphous silicon solar cells

The open circuit voltage (Voc) of n–i–p type hydrogenated amorphous silicon (a-Si:H) solar cells has been examined by means of experimental and numerical modeling. The i- and p-layer limitations on Voc are separated and the emphasis is to identify the impact of different kinds of p-layers. Hydrogena...

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Bibliographic Details
Published in:Journal of non-crystalline solids 2006-06, Vol.352 (9-20), p.1841-1846
Main Authors: Liao, Xianbo, Du, Wenhui, Yang, Xiesen, Povolny, Henry, Xiang, Xianbi, Deng, Xunming, Sun, Kai
Format: Article
Language:English
Subjects:
Amorphous semiconductors
Applied sciences
Energy
Exact sciences and technology
Microstructure
Natural energy
Photovoltaic conversion
Solar cells
Solar cells. Photoelectrochemical cells
Solar energy
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Summary:The open circuit voltage (Voc) of n–i–p type hydrogenated amorphous silicon (a-Si:H) solar cells has been examined by means of experimental and numerical modeling. The i- and p-layer limitations on Voc are separated and the emphasis is to identify the impact of different kinds of p-layers. Hydrogenated protocrystalline, nanocrystalline and microcrystalline silicon p-layers were prepared and characterized using Raman spectroscopy, high resolution transmission electron microscopy (HRTEM), optical transmittance and activation energy of dark-conductivity. The n–i–p a-Si:H solar cells incorporated with these p-layers were comparatively investigated, which demonstrated a wide variation of Voc from 1.042V to 0.369V, under identical i- and n-layer conditions. It is found that the nanocrystalline silicon (nc-Si:H) p-layer with a certain nanocrystalline volume fraction leads to a higher Voc. The optimum p-layer material for n–i–p type a-Si:H solar cells is not found at the onset of the transition between the amorphous to mixed phases, nor is it associated with a microcrystalline material with a large grain size and a high volume fraction of crystalline phase.
ISSN:0022-3093
1873-4812
DOI:10.1016/j.jnoncrysol.2005.11.110