Dynamic characteristics of MICC polycrystalline thin film transistors

We studied the DC bias-induced changes in the performance of the PMOS ring oscillator made of poly-Si TFT. The poly-Si was prepared by metal-induced crystallization of amorphous silicon through a cap layer (MICC). The p-channel MICC poly-Si TFT exhibited the field-effect mobility of 31cm2/Vs, on/off...

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Bibliographic Details
Published in:Journal of non-crystalline solids 2006-06, Vol.352 (9-20), p.1745-1748
Main Authors: Son, Yong-Duck, Yang, Kyung-Dong, Bae, Byung-Seong, Park, Kyu-Chang, Jang, Jin
Format: Article
Language:English
Subjects:
Applied sciences
Crystallization
Electronics
Exact sciences and technology
Miscellaneous
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Thin film transistors
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Summary:We studied the DC bias-induced changes in the performance of the PMOS ring oscillator made of poly-Si TFT. The poly-Si was prepared by metal-induced crystallization of amorphous silicon through a cap layer (MICC). The p-channel MICC poly-Si TFT exhibited the field-effect mobility of 31cm2/Vs, on/off current ratio of ∼107 and threshold voltage of −2.8V. A 41-stage PMOS inverter chain exhibited an operation frequency of 1.2MHz at an applied voltage of VDD=−18V. The degradation of the ring oscillator made of MICC poly-Si TFT is much less than that of ELA TFT by DC bias stress. The difference appears to be due to the smooth surface of MICC poly-Si as compared with a typical excimer laser annealing (ELA) poly-Si.
ISSN:0022-3093
1873-4812
DOI:10.1016/j.jnoncrysol.2005.11.131