Light-induced changes in diphasic nanocrystalline silicon films and solar cells

A series of diphasic nanocrystalline silicon films and solar cells was prepared using different hydrogen dilution ratios of silane by very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD). It was observed that after light soaking the open circuit voltage (Voc) of the diphasic sol...

Full description

Saved in:
Bibliographic Details
Published in:Journal of non-crystalline solids 2006-06, Vol.352 (9-20), p.1904-1908
Main Authors: Hao, Huiying, Liao, Xianbo, Zeng, Xiangbo, Diao, Hongwei, Xu, Ying, Kong, Guanglin
Format: Article
Language:English
Subjects:
Applied sciences
Energy
Exact sciences and technology
Natural energy
Photovoltaic conversion
Silicon
Solar cells. Photoelectrochemical cells
Solar energy
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:A series of diphasic nanocrystalline silicon films and solar cells was prepared using different hydrogen dilution ratios of silane by very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD). It was observed that after light soaking the open circuit voltage (Voc) of the diphasic solar cells increased, while that of amorphous silicon solar cells decreased. Raman scattering spectroscopy was performed on the series of diphasic silicon films before and after light soaking. It was found that after light soaking the nanostructures in the diphasic nanocrystalline silicon films were changed. Both the grain sizes and grain volume fraction reduced, while the grain boundary components increased. These results provide experimental evidence for the conjecture that the light-induced increase in Voc of the diphasic nanocrystalline solar cells might be induced by the changes in the nanostructure of the intrinsic layer.
ISSN:0022-3093
1873-4812
DOI:10.1016/j.jnoncrysol.2005.12.031