Study of trap states in zinc oxide (ZnO) thin films for electronic applications

The electrical properties of ZnO thin films grown by pulsed laser deposition were studied. Field-effect devices with a mobility reaching 1cm2/Vs show non-linearities both in the current–voltage and in the transfer characteristics which are explained as due to the presence of trap states. These traps...

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Bibliographic Details
Published in:Journal of non-crystalline solids 2008-05, Vol.354 (19-25), p.2519-2522
Main Authors: Casteleiro, C., Gomes, H.L., Stallinga, P., Bentes, L., Ayouchi, R., Schwarz, R.
Format: Article
Language:English
Subjects:
Applied sciences
Defects
Electronics
Exact sciences and technology
Laser deposition
Physics
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Thermally stimulated and depolarization current
Thin film transistors
Transistors
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Summary:The electrical properties of ZnO thin films grown by pulsed laser deposition were studied. Field-effect devices with a mobility reaching 1cm2/Vs show non-linearities both in the current–voltage and in the transfer characteristics which are explained as due to the presence of trap states. These traps cause a reversible threshold voltage shift as revealed by low-frequency capacitance–voltage measurements in metal insulator semiconductor (MIS) capacitors. Thermal detrapping experiments in heterojunctions confirm the presence of a trap state located at 0.32eV.
ISSN:0022-3093
1873-4812
DOI:10.1016/j.jnoncrysol.2007.10.059