Transport properties of nanocrystalline silicon and silicon–germanium

We report on the minority carrier lifetime, diffusion length and mobility in nanocrystalline Si and (Si,Ge) p+nn+ devices. The devices were fabricated on stainless steel using VHF plasma deposition techniques. Minority carrier lifetime was measured using junction reverse recovery techniques. The min...

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Bibliographic Details
Published in:Journal of non-crystalline solids 2008-05, Vol.354 (19-25), p.2426-2429
Main Authors: Saripalli, Satya, Sharma, Puneet, Reusswig, P., Dalal, Vikram
Format: Article
Language:English
Subjects:
Applied sciences
Cross-disciplinary physics: materials science
rheology
Energy
Exact sciences and technology
Materials science
Nanocrystalline materials
Nanoscale materials and structures: fabrication and characterization
Natural energy
Photovoltaic conversion
Physics
Solar cells
Solar cells. Photoelectrochemical cells
Solar energy
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Summary:We report on the minority carrier lifetime, diffusion length and mobility in nanocrystalline Si and (Si,Ge) p+nn+ devices. The devices were fabricated on stainless steel using VHF plasma deposition techniques. Minority carrier lifetime was measured using junction reverse recovery techniques. The minority carrier lifetime was found to be well correlated with the inverse of defect density and increased with increasing measurement temperature. Simultaneous measurement of diffusion length and lifetime yielded values for hole mobility.
ISSN:0022-3093
1873-4812
DOI:10.1016/j.jnoncrysol.2007.10.060