Printed silicon as diode and FET materials – Preliminary results

• Published in: Journal of non-crystalline solids 2008-05, Vol.354 (19-25), p.2623-2626
• Main Authors: Han, Sijin, Dai, Xuliang, Loy, Phillip, Lovaasen, John, Huether, Joshua, Hoey, Justin M., Wagner, Andrew, Sandstrom, Joseph, Bunzow, David, Swenson, Orven F., Akhatov, Iskander S., Schulz, Douglas L.
• Format: Article
• Language: English
• Subjects: Applied sciences; Electronics; Exact sciences and technology; Physics; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Silicon; Spin-coating; Thin-film transistors; Transistors
• ISSN: 0022-3093; 1873-4812
• DOI: 10.1016/j.jnoncrysol.2007.10.090

While polymers have been evaluated as the active layers in flexible electronics, the technical community is presently pursuing printed routes to inorganic semiconductors as a means of achieving higher mobilities. To utilize cost-effective polymeric substrates in a roll-to-roll manufacturing environment, low-temperature atmospheric-pressure deposition routes to semiconductors with reasonable electrical properties are required. In this talk, we will report the results of our initial investigations using cyclohexasilane (Si6H12) as a liquid precursor to amorphous silicon. Amorphous silicon (a-Si) films were prepared by spin-coating Si6H12 inks followed by various light and/or thermal treatments. Carrier properties of printed a-Si films prepared using undoped inks were determined by Hall probe. In addition, the results of various doping strategies for the formation of n-type and p-type a-Si layers led to heterojunction (i.e., heavily-doped Si wafer substrate) structures that exhibited field effect properties as well as multilayer devices that exhibited diode-type properties. Preliminary investigations indicate the possibility of generating 10μm wide lines of a-Si materials by Collimated Aerosol Beam Direct-Write (CAB-DW™) of Si6H12-based inks.