Effect of UV anneal on plasma CVD low- k film

Plasma-enhanced chemical vapor deposition (PE-CVD) low-dielectric (low- k) film was irradiated with ultra violet (UV) light of wavelength 172 nm to enhance mechanical strength and reduce dielectric constant ( k value). The thickness measurement method for the UV annealed low- k film is discussed. Th...

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Bibliographic Details
Published in:Journal of non-crystalline solids 2008-05, Vol.354 (26), p.2973-2982
Main Authors: Shioya, Yoshimi, Ohdaira, Toshiyuki, Suzuki, Ryoichi, Seino, Yutaka, Omote, Kazuhiko
Format: Article
Language:English
Subjects:
Amorphous metals
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Condensed matter: structure, mechanical and thermal properties
Dielectric properties
Dielectric properties of solids and liquids
Dielectrics, piezoelectrics, and ferroelectrics and their properties
Exact sciences and technology
FTIR measurements
Indentation
Insulators
metallic glasses
microindentation
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Optical properties of specific thin films
Permittivity (dielectric function)
Physical radiation effects, radiation damage
Physics
Plasma deposition
relaxation, electric modulus
Silicates
Structure of solids and liquids
crystallography
Ultraviolet, visible, and infrared radiation effects (including laser radiation)
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Summary:Plasma-enhanced chemical vapor deposition (PE-CVD) low-dielectric (low- k) film was irradiated with ultra violet (UV) light of wavelength 172 nm to enhance mechanical strength and reduce dielectric constant ( k value). The thickness measurement method for the UV annealed low- k film is discussed. The effects of UV irradiation on dielectric constant, shrinkage, stress, density, pore size, mechanical strength, and structure are clarified and the mechanism is discussed.
ISSN:0022-3093
1873-4812
DOI:10.1016/j.jnoncrysol.2007.12.011