Determination of carrier mobility in MEH-PPV thin-films by stationary and transient current techniques

Charge transport and shelf-degradation of MEH-PPV thin-films were investigated through stationary (e.g. current versus voltage — JxV) and transient (e.g. Time-of-Flight — ToF, Dark-Injection Space-Charge-Limited Current — DI-SCLC, Charge Extraction by Linearly Increasing Voltage — CELIV) current tec...

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Bibliographic Details
Published in:Journal of non-crystalline solids 2012-02, Vol.358 (3), p.484-491
Main Authors: Amorim, C.A., Cavallari, M.R., Santos, G., Fonseca, F.J., Andrade, A.M., Mergulhão, S.
Format: Article
Language:English
Subjects:
Applied sciences
CELIV
DI-SCLC
Electrical, magnetic and optical properties
Exact sciences and technology
OFET
OLED
Organic polymers
Physicochemistry of polymers
Properties and characterization
ToF
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Summary:Charge transport and shelf-degradation of MEH-PPV thin-films were investigated through stationary (e.g. current versus voltage — JxV) and transient (e.g. Time-of-Flight — ToF, Dark-Injection Space-Charge-Limited Current — DI-SCLC, Charge Extraction by Linearly Increasing Voltage — CELIV) current techniques. Charge carrier mobility in nanometric films was best characterized through JxV and DI-SCLC. It approaches 10−6cm2/Vs under a SCLC regime with deep traps for light-emitting diode applications. ToF measurements performed on micrometric layers (i.e. ~3μm) confirmed studies in 100nm-thick films as deposited in OLEDs. All results were comparable to a similar poly(para-phenylene vinylene) derivative, MDMO-PPV. Electrical properties extracted from thin-film transistors demonstrated mobility dependence on carrier concentration in the channel (~ 10−7–10−4cm2/Vs). At low accumulated charge levels and reduced free carrier concentration, a perfect agreement to the previously cited techniques was observed. Degradation was verified through mobility reduction and changes in trap distribution of states. ► We apply stationary and transient current techniques to investigate mobility. ► MEH-PPV light-emitting diode shelf-degradation is studied. ► Carrier mobility is studied through ToF, CELIV, DI-SCLC, JxV and FET. ► Techniques are applied to thin-films and thick layers. ► Results are comparable to other PPV derivatives in literature.
ISSN:0022-3093
1873-4812
DOI:10.1016/j.jnoncrysol.2011.11.001