Comparison of growth methods for Si/SiO2 nanostructures as nanodot hetero-emitters for photovoltaic applications

Two different growth mechanisms are compared for the fabrication of Si/SiO2 nanostructures on crystalline silicon (c-Si) to be used as hetero-emitter in high-efficiency solar cells: (1) The decomposition of substoichiometric amorphous SiOx (a-SiOx) films with 0

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Bibliographic Details
Published in:Journal of non-crystalline solids 2012-09, Vol.358 (17), p.2253-2256
Main Authors: Roczen, Maurizio, Malguth, Enno, Schade, Martin, Schöpke, Andreas, Laades, Abdelazize, Blech, Michael, Gref, Orman, Barthel, Thomas, Töfflinger, Jan Amaru, Schmidt, Manfred, Leipner, Hartmut S., Korte, Lars, Rech, Bernd
Format: Article
Language:English
Subjects:
Applied sciences
Chemical synthesis methods
Cross-disciplinary physics: materials science
rheology
Electronics
Energy
Exact sciences and technology
hetero-emitter
HRTEM
Materials
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Methods of nanofabrication
Natural energy
Photovoltaic conversion
Physics
Silicon nanostructures
Solar cells. Photoelectrochemical cells
Solar energy
Theory and models of film growth
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Summary:Two different growth mechanisms are compared for the fabrication of Si/SiO2 nanostructures on crystalline silicon (c-Si) to be used as hetero-emitter in high-efficiency solar cells: (1) The decomposition of substoichiometric amorphous SiOx (a-SiOx) films with 0
ISSN:0022-3093
1873-4812
DOI:10.1016/j.jnoncrysol.2011.11.024