Investigation of charge carriers transport from extraction current transients of injected charge carriers

The extraction of injected charge carriers technique for investigation of the transport in the metal-insulator-semiconductor structures is proposed. The mobility and the amount of accumulated charge carriers are determined from extraction current transients in both, small charge and space charge lim...

Full description

Saved in:
Bibliographic Details
Published in:Journal of non-crystalline solids 2012-02, Vol.358 (4), p.748-750
Main Authors: JUSKA, G, NEKRASAS, N, GENEVICIUS, K
Format: Article
Language:English
Subjects:
CELIV
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Electronic transport in interface structures
Exact sciences and technology
Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
Mobility
OFET
Organic materials
Physics
Solar cells
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The extraction of injected charge carriers technique for investigation of the transport in the metal-insulator-semiconductor structures is proposed. The mobility and the amount of accumulated charge carriers are determined from extraction current transients in both, small charge and space charge limited current cases. The extraction currents transients obtained experimentally in the structures with various organic materials are demonstrated. ► The extraction of injected charge carriers technique for investigation of the transport in the metal-insulator-semiconductor structures is proposed. ► The extraction currents transients obtained experimentally in the structures with various organic materials are demonstrated. ► The mobility and the amount of accumulated charge carriers are determined from extraction current transients. ► The technique could be also applicable FET structures.
ISSN:0022-3093
1873-4812
DOI:10.1016/j.jnoncrysol.2011.12.016