Effect of Silane flow rate on microstructure of Silicon films deposited by HWCVD

Hydrogenated silicon films ranging from pure amorphous to those containing small crystallites in large crystalline fraction are prepared using the HWCVD technique without using any hydrogen dilution which is supposed to be necessary for the deposition of nanocrystalline Si films. The only parameter...

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Bibliographic Details
Published in:Journal of non-crystalline solids 2012-09, Vol.358 (17), p.1990-1994
Main Authors: Gogoi, Purabi, Jha, Himanshu S., Agarwal, Pratima
Format: Article
Language:English
Subjects:
Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
Condensed matter: structure, mechanical and thermal properties
Cross-disciplinary physics: materials science
rheology
Defects and impurities: doping, implantation, distribution, concentration, etc
Exact sciences and technology
HWCVD
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Microstructure
Nanocrystalline materials
Nanocrystalline silicon
Nanoscale materials and structures: fabrication and characterization
Physics
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
Thin film structure and morphology
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Summary:Hydrogenated silicon films ranging from pure amorphous to those containing small crystallites in large crystalline fraction are prepared using the HWCVD technique without using any hydrogen dilution which is supposed to be necessary for the deposition of nanocrystalline Si films. The only parameter that is varied is Silane flow rate. The deposition rate ranges from 6–27Å/s. The band gap of the films (1.8–2.0eV) is high compared to the regular films, which is attributed to the improved short and medium range order as well as the presence of low density amorphous tissues in the grain boundary regions. The films show improved stability under long term light exposure due to more ordered structure and presence of hydrogen mostly as strong Si―H bonds. ► Hydrogenated silicon films from pure amorphous to nanocrystalline are prepared. ► Films are prepared without any hydrogen dilution. ► The only parameter that is varied is Silane flow rate. ► High deposition rate ~10–27Å/s is achieved for the films. ► Films contain less amount of hydrogen and mostly bonded in monohydride mode.
ISSN:0022-3093
1873-4812
DOI:10.1016/j.jnoncrysol.2011.12.095