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Radiation-induced effects in chalcogenide amorphous semiconductors: On the role of destruction–polymerization transformations

The role of destruction–polymerization transformations in radiation-induced effects was considered with the example of As–S chalcogenide amorphous semiconductors. It was shown that γ-irradiation leads to a long-wave shift of the fundamental optical absorption edge for stoichiometric As2S3, while no...

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Bibliographic Details
Published in:Journal of non-crystalline solids 2013-10, Vol.377, p.46-48
Main Authors: Shpotyuk, Ya, Shpotyuk, M.
Format: Article
Language:English
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Summary:The role of destruction–polymerization transformations in radiation-induced effects was considered with the example of As–S chalcogenide amorphous semiconductors. It was shown that γ-irradiation leads to a long-wave shift of the fundamental optical absorption edge for stoichiometric As2S3, while no changes were observed in S-rich AsS2 glass. At the same time, the rejuvenation of annealed samples leads to a long-wave shift of the fundamental optical absorption edge for both glasses. These results are explained within a concept of destruction–polymerization transformations by accepting that metastable charged defects are formed owing to radiation-induced switching of covalent bonds. •γ-Induced darkening in glassy As2S3 despite thermal pre-history•Annealed As2S3 glass accumulates γ-irradiation more intensively than the rejuvenated one.•S-rich glassy AsS2 diminishes γ-induced effect.•Rejuvenation effect is opposite to thermally-induced physical ageing.
ISSN:0022-3093
1873-4812
DOI:10.1016/j.jnoncrysol.2013.01.054