Some insights into the mechanism of photoluminescence of As-S-based films synthesized by PECVD

Chalcogenide arsenic sulphide thin films were obtained by reacting arsenic and sulfur vapors in a low-temperature plasma discharge. Photoluminescence (PL) of As-S films with compositions As34S66 and As53S47 is studied in detail. An increase in the arsenic concentration leads to the emergence of a cr...

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Bibliographic Details
Published in:Journal of non-crystalline solids 2019-06, Vol.513, p.120-124
Main Authors: Usanov, Dmitry, Nezhdanov, Aleksey, Kudryashov, Mikhail, Krivenkov, Ivan, Markelov, Aleksey, Trushin, Vladimir, Mochalov, Leonid, Gogova, Daniela, Mashin, Aleksandr
Format: Article
Language:English
Subjects:
Arsenic sulfide
Chalcogenide films
Nanocrystals formation
PECVD
Plasma influence
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Summary:Chalcogenide arsenic sulphide thin films were obtained by reacting arsenic and sulfur vapors in a low-temperature plasma discharge. Photoluminescence (PL) of As-S films with compositions As34S66 and As53S47 is studied in detail. An increase in the arsenic concentration leads to the emergence of a crystalline phase in the As53S47 films. In addition, these films exhibit an intense broad PL band with a maximum at 2.2 eV upon a continuous 473 nm laser excitation. The interplay between composition, structure and optical properties is revealed. By coupling of PL, Raman spectroscopy and absorption data, possible mechanisms of radiative recombination in the context of the glass structure formation in the plasma discharge are discussed. •It is possible to synthesize As-S films by PECVD method.•Fully amorphous films and films with micro/nano crystalline inclusions were obtained.•The films with micro/nano crystalline inclusions demonstrate broad photoluminescence band.
ISSN:0022-3093
1873-4812
DOI:10.1016/j.jnoncrysol.2019.03.015