New optical oxygen-deficient centers in 80 keV Re-implanted amorphous silica

•New optically active center was discovered in glassy silica ‒ Re-modified ODC.•Re ions in the nearest location of Si-ODCs causing a change in their energy structure.•Luminescence of ODC/Re is more efficiently excited by the energy transfer from Si-ODC.•Thermal annealing increases the emission yield...

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Bibliographic Details
Published in:Journal of non-crystalline solids 2020-02, Vol.529, p.119775, Article 119775
Main Authors: Zatsepin, A.F., Kuznetsova, Y.A., Shtang, T.V., Mikhaylov, A.N., Koubisy, M.S.I.
Format: Article
Language:English
Subjects:
Ion implantation
Optical absorption
Oxygen-deficient centers
Photoluminescence
Radiation damage
Silicon dioxide
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Summary:•New optically active center was discovered in glassy silica ‒ Re-modified ODC.•Re ions in the nearest location of Si-ODCs causing a change in their energy structure.•Luminescence of ODC/Re is more efficiently excited by the energy transfer from Si-ODC.•Thermal annealing increases the emission yield by three times. The formation of radiation-induced defects in amorphous SiO2 under the implantation with Re ions was studied by optical absorption and photoluminescence spectroscopies. A new type of oxygen-deficient center, denoted as ODC/Re, has been discovered. The origin of ODC/Re is associated with disturbing influence of Re ions located in the nearest environment of ODCs and causing a change in their energy structure. The absorption and emission bands of Re-modified ODC occur with participation of singlet S1 and triplet T1 excited states, adiabatic terms for which are shifted relative to those for typical Si-ODC. Spectral characteristics of absorption and photoluminescence of ODC/Re along with emission kinetic parameters allow us supposing that the structure of center is close to the ODC(II)-type. Thermal annealing leads to an increase in the emission intensities by a factor of three for both Si-ODC and ODC/Re.
ISSN:0022-3093
1873-4812
DOI:10.1016/j.jnoncrysol.2019.119775