Zinc oxide incorporated indium tungsten oxide amorphous thin films for thin film transistors applications

• Published in: Journal of non-crystalline solids 2021-03, Vol.556, p.120556, Article 120556
• Main Authors: Chauhan, Ram Narayan, Tiwari, Nidhi
• Format: Article
• Language: English
• Subjects: Amorphous oxide semiconductor; Amorphous thin films; RF magnetron sputtering; Thin film transistors; X-ray diffraction
• ISSN: 0022-3093; 1873-4812
• DOI: 10.1016/j.jnoncrysol.2020.120556

•ZnO, IWO, and ZnO incorporated IWO (ZIWO) thin films were prepared by RF magnetron sputtering.•Tungsten (W) doping in ZIO resulted smooth and amorphous ZIWO thin film.•ZIWO thin film exhibits a lower concentration of loosely bonded oxygen species.•Thin film transistor (TFT) fabricated with ZIWO film resulted a good device performance.•ZIWO TFT exhibits better positive gate biased stability than the ZnO and IWO TFTs. Zinc oxide (ZnO), indium tungsten oxide (IWO), and ZnO incorporated indium tungsten oxide (ZIWO) thin films (thickness ~ 10 nm) have been fabricated at room temperature by radio-frequency (RF) magnetron sputtering to study their physical and chemical properties for development of high performance and stable thin film transistors. The study reveals that ZnO incorporation with IWO resulted amorphous, smooth and better quality of thin films in comparison to the zinc oxide and indium tungsten oxide. Furthermore, the fabricated ZIWO thin film transistor exhibits a good device performance with field-effect mobility (μFE) of 26.80 cm2/Vs, threshold voltage (Vth) of 0.62 V, sub-threshold swing (SS) of 0.39 V/decade, and positive biased stress shifting (∆Vth) of +0.82 V than the IWO (conducting in nature) and ZnO (μFE ~ 1.95 cm2/Vs, Vth ~ 14.40 V, SS ~ 1.68 V/decade, ∆Vth of +4.20 V) TFTs counterparts.