Role of different atmosphere gasses during annealing in chemical-solution-deposition NiO thin films processing

• Published in: Journal of non-crystalline solids 2023-01, Vol.600, p.122012, Article 122012
• Main Authors: Martínez-Gil, M., Cabrera-German, D., Rodríguez-Curiel, M., Abundiz-Cisneros, N., Vargas-Viveros, E., Cota, L., De La Cruz, W.
• Format: Article
• Language: English
• Subjects: p-type NiO: Annealing process: Electrical properties: Optical properties: Chemical composition by XPS
• ISSN: 0022-3093; 1873-4812
• DOI: 10.1016/j.jnoncrysol.2022.122012

•Chemical-solution-deposition processing of NiO thin films on glass substrates.•Annealing of amorphous NiO thin films using dry or wet O2 and N2 atmospheres.•Photoelectron spectra characteristics depend on annealing atmosphere composition.•Wet O2 annealing atmosphere enables improved optical and electrical properties.•High transmittance and p-type conductivity due to excess of oxygen in NiO. Thermally processed nickel oxide (NiO) thin films were synthesized from nickel hydroxide films obtained by chemical solution deposition. Potential applications derived from electronic properties were studied by thermally treated thin films under two controlled annealing atmospheres. The NiO thin films with thicknesses between 160 and 192 nm and a nanowall-like morphology were obtained. Amorphous thin films with high optical transmittance in the visible region of around 85 % and ∼3.7 eV bandgap energy were obtained. The chemical composition of the NiO films was determined by X-ray photoelectron spectroscopy (XPS), which confirmed that the films were indeed composed of NiO after thermal treatment. The electrical properties were acquired through the Hall effect technique. The NiO films exhibit a p-type conductivity; the highest carrier concentration is 5×1015 cm−3. Mobility up to 11 cm2∙V−1∙S−1 and low resistivity of 9×102 Ω∙cm. These properties are suitable for applications in transparent electronic devices.