Anisotropic magnetotransport around the ν=1 bilayer quantum Hall state

An anisotropic magnetotransport that depends on a direction of an in-plane magnetic field was investigated in a bilayer quantum Hall system. We have found that the longitudinal resistance around the bilayer ν=1 quantum Hall state strongly varies when we changed the relative angle between the current...

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Bibliographic Details
Published in:The Journal of physics and chemistry of solids 2005-08, Vol.66 (8), p.1556-1559
Main Authors: Iwata, Kazuki, Morino, Masayuki, Suzuki, Michiro, Fukuda, Akira, Sawada, Anju, Ezawa, Zyun F., Kumada, Norio, Hirayama, Yoshiro
Format: Article
Language:English
Subjects:
Anisotropic transport
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Electronic transport in interface structures
Electronic transport in multilayers, nanoscale materials and structures
Exact sciences and technology
Physics
Quantum Hall effect
Quantum hall effect (including fractional)
Quantum wells
Tilted magnetic fields
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Description
Summary:An anisotropic magnetotransport that depends on a direction of an in-plane magnetic field was investigated in a bilayer quantum Hall system. We have found that the longitudinal resistance around the bilayer ν=1 quantum Hall state strongly varies when we changed the relative angle between the current and the in-plane field. Indeed, the anisotropy becomes remarkable at the phase transition point between the commensurate and incommensurate states. This result suggests that a unidirectional state appears around the transition.
ISSN:0022-3697
1879-2553
DOI:10.1016/j.jpcs.2005.05.056