Optical parameters of In–Se and In–Se–Te thin amorphous films prepared by pulsed laser deposition

• Published in: The Journal of physics and chemistry of solids 2007-05, Vol.68 (5), p.846-849
• Main Authors: Hrdlicka, M., Prikryl, J., Pavlista, M., Benes, L., Vlcek, M., Frumar, M.
• Format: Article
• Language: English
• Subjects: A. Amorphous materials; A. Chalcogenides; A. Thin films; Amorphous semiconductors; glasses; Applied sciences; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Condensed matter: structure, mechanical and thermal properties; D. Optical properties; Energy; Energy. Thermal use of fuels; Exact sciences and technology; Materials and auxiliary equipments used in energy engineering; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Optical properties of specific thin films; Physics; Structure and morphology; thickness; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Thin film structure and morphology
• ISSN: 0022-3697; 1879-2553
• DOI: 10.1016/j.jpcs.2007.02.043

The thin films of materials based on In–Se are under study for their applicability in photovoltaic devices, solid-state batteries and phase-change memories. The amorphous thin films of In 2Se 3− x Te x ( x=0–1.5) and InSe were prepared by pulsed laser deposition method (PLD) using a KrF excimer laser beam ( λ=248 nm, 0.5 J cm −2) from polycrystalline bulk targets. The compositions of films verified by energy-dispersive X-ray analysis (EDX) were close to the compositions of targets. The surfaces of PLD films containing small amount of droplets were viewed by optical and scanning electron microscopy (SEM). The optical properties (transmittance and reflectance spectra, spectral dependence of index of refraction, optical gap, single-oscillator energy, dispersion energy, dielectric constant) of the films were determined. The values of index of refraction increased with increasing substitution of Te for Se in In 2Se 3 films, the values of the optical gap decreased with increasing substitution of Te for Se in In 2Se 3 films.