Molecular control over Ag/p-Si diode by organic layer

• Published in: The Journal of physics and chemistry of solids 2007-09, Vol.68 (9), p.1770-1773
• Main Authors: Aydin, M.E., Yakuphanoglu, F.
• Format: Article
• Language: English
• Subjects: A. Organic compounds; A. Semiconductors; Condensed matter: electronic structure, electrical, magnetic, and optical properties; D. Electrical properties; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Exact sciences and technology; Physics; Surface double layers, schottky barriers, and work functions
• ISSN: 0022-3697; 1879-2553
• DOI: 10.1016/j.jpcs.2007.04.023

Electrical transport properties of Ag metal-fluorescein sodium salt (FSS) organic layer-silicon junction have been investigated. The current–voltage ( I– V) characteristics of the diode show rectifying behavior consistent with a potential barrier formed at the interface. The diode indicates a non-ideal I– V behavior with an ideality factor higher than unity. The ideality factor of the Ag/FSS/p-Si diode decreases with increasing temperature and the barrier height increases with increasing temperature. The barrier height ( φ b=0.98 eV) obtained from the capacitance–voltage ( C– V) curve is higher than barrier height ( φ b=0.72 eV) derived from the I– V measurements. The barrier height of the Ag/FSS/p-Si Schottky diode at the room temperature is significantly larger than that of the Ag/p-Si Schottky diode. It is evaluated that the FSS organic layer controls electrical charge transport properties of Ag/p-Si diode by excluding effects of the SiO 2 residual oxides on the hybrid diode.