High drivability μc-Si TFT device with a compound channel layer structure

In this paper, low-temperature deposited microcrystalline silicon (μc-Si) was applied to make a high-performance thin film transistor (TFT). The a-Si film is used as a carrier-blocking layer inserted into μc-Si TFT for suppressing unwanted OFF-state current. This compound TFT can achieve higher driv...

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Bibliographic Details
Published in:The Journal of physics and chemistry of solids 2008-02, Vol.69 (2), p.645-647
Main Authors: Lin, Chiung-Wei, Chang, Chih-Chao, Lee, Yeong-Shyang, Yeh, Yung-Hui
Format: Article
Language:English
Subjects:
A. Amorphous materials
A. Non-crystalline materials
A. Semiconductors
Applied sciences
B. Plasma deposition
B. Vapour deposition
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
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Summary:In this paper, low-temperature deposited microcrystalline silicon (μc-Si) was applied to make a high-performance thin film transistor (TFT). The a-Si film is used as a carrier-blocking layer inserted into μc-Si TFT for suppressing unwanted OFF-state current. This compound TFT can achieve higher driving current (1.47×10 6 A) than the conventional a-Si TFT. Other parameters such as threshold voltage ( V th), sub-threshold swing (SS) and field effective carrier mobility value were 1.34 V, 1.32 V/dec and 1.05 cm 2/V s, respectively. It is noted that all the process for compound TFT are compactable with current a-Si industry.
ISSN:0022-3697
1879-2553
DOI:10.1016/j.jpcs.2007.07.120