Multi-phonon capture of charge carriers by dislocation kinks in semiconductors

In view of the problem of recombination-enhanced motion of dislocations in semiconductors, we studied the thermal capture of an electron by a smooth dislocation kink. Multi-phonon capture becomes possible due to localization of the carrier on the kink. The localized state on the smooth kink is studi...

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Bibliographic Details
Published in:The Journal of physics and chemistry of solids 2008-11, Vol.69 (11), p.2785-2790
Main Authors: Vardanyan, Armen S., Vardanyan, Robert A., Kteyan, Armen A.
Format: Article
Language:English
Subjects:
A. Semiconductors
Charge carriers: generation, recombination, lifetime, and trapping
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Conductivity phenomena in semiconductors and insulators
D. Defects
D. Phonons
Electronic transport in condensed matter
Exact sciences and technology
Physics
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Summary:In view of the problem of recombination-enhanced motion of dislocations in semiconductors, we studied the thermal capture of an electron by a smooth dislocation kink. Multi-phonon capture becomes possible due to localization of the carrier on the kink. The localized state on the smooth kink is studied in the deformation potential approximation. In this case the potential created by the kink is described by Poschl–Teller function, which enables to find the analytical expressions for the eigenstates and the corresponding wave functions. With the use of the ground state wave function we find the multi-phonon capture cross-section for two limiting temperature cases, corresponding to the thermally activated and quantum transitions between vibronic terms.
ISSN:0022-3697
1879-2553
DOI:10.1016/j.jpcs.2008.06.138