A novel thiophene-based D-π-A type organic material: Synthesis, characterization and Schottky diode applications

• Published in: Journal of photochemistry and photobiology. A, Chemistry. Chemistry., 2023-09, Vol.443, p.114877, Article 114877
• Main Authors: Erdoğan, Musa, Deniz, Ali Rıza, Çaldıran, Zakir
• Format: Article
• Language: English
• Subjects: Capacitance-voltage; Current-voltage; D-π-A; Dicyanovinyl; Schttoky diode; Triphenylamine
• ISSN: 1010-6030
• DOI: 10.1016/j.jphotochem.2023.114877

[Display omitted] •The TPA-T-DCV 9 organic material synthesized.•The TPA-T-DCV 9 material used in diode application and it has been observed that it improves the electrical properties of the diode.•The current–voltage and capacitance–voltage characteristics of the diodes were investigated.•It was determined that the basic diode parameters were strongly dependent on the temperature. Herein, a newly designed π-conjugated D-π-A type organic material, namely TPA-T-DCV 9, was synthesized in excellent yield by introducing triphenylamine as electron donor and dicyanovinyl unit attached to the benzene ring as electron acceptor at positions 3 and 4 of the central thiophene skeleton as π-linker, respectively. The Au/TPA-T-DCV 9/p-Si/Al diode was fabricated by using TPA-T-DCV 9 material as interface material. The electrical properties of this diode were analyzed using the current–voltage (I-V) curve of the diode and it was determined that the use of TPA-T-DCV 9 material improved electrical charecteris. The I-V measuments of the diode are performed between 100 K and 325 K. According to calculations from TE theory, n value changes between 4.04 and 1.19 value for increasing temperature value, Φb value changes between 0.33 and 0.81 eV value with increasing temperature. In addition, Rs values calculated from Cheung functions vary between 2004 Ω and 10470 Ω with decreasing temperature value. From the temperature-dependent I-V graphs of the diode, it was determined that the diode parameters were in a strong change depending on the temperature gradient. The frequency response of capacitance–voltage (C-V) measurements of Au/TPA-T-DCV 9/p-Si/Al diode was investigated.