High performance of Mn-doped CdSe quantum dot sensitized solar cells based on the vertical ZnO nanorod arrays

• Published in: Journal of power sources 2016-09, Vol.325, p.438-445
• Main Authors: Hou, Juan, Zhao, Haifeng, Huang, Fei, Jing, Qun, Cao, Haibin, Wu, Qiang, Peng, Shanglong, Cao, Guozhong
• Format: Article
• Language: English
• Subjects: CdSe; Passivation layer; Quantum dot sensitized solar cells; ZnO nanorod arrays
• ISSN: 0378-7753; 1873-2755
• DOI: 10.1016/j.jpowsour.2016.06.070

Doping transition metal ions Mn2+ to semiconductor quantum dots (QDs) are extremely interesting for the development of photovoltaic devices. Quantum dot sensitized solar cells (QDSCs) are able to show promising power conversion efficiencies (PCE) by employing Mn2+ doped QDs. Herein we achieve effective CdS/MnCdSe/ZnS QDs co-sensitized vertical ZnO nanorod arrays film that provides an appreciable enhancement in photovoltaic performance. The measured PCE of the solar cells with Mn2+ doped CdSe QDs is 4.14%, which is higher than the efficiency of 2.91% for the solar cells without Mn2+ or a ∼42% increase. The improvement in PCE is ascribed to a higher open-circuit voltage (Voc = 0.74 V) and a superior short-circuit current density (Jsc = 12.6 mA cm−2) with the introduction of Mn2+ into CdSe QDs. The enhancement seen with Mn2+ doped CdSe QDs are investigated and explained by the fact that the enhanced light absorption and reduced charge recombination by the formation of MnCdSe passivation layer covering the QDs. •ZnS/MnCdSe/CdS QDs sensitized ZnO NRA QDSCs was fabricated.•Introduction of Mn2+ into CdSe QDs enhances the Voc and Jsc of QDSCs.•Mn-CdSe layer acts as a passivation barrier for reducing charge recombination.•ZnS/MnCdSe/CdS quantum dot sensitized ZnO NRA QDSCs exhibit a high PCE of 4.14%.