Improved energy storage properties in Pb0.82La0.12(ZrxTi1-x)O3 antiferroelectric films with different Zr/Ti ratios

• Published in: Journal of power sources 2025-02, Vol.628, p.235843, Article 235843
• Main Authors: Wang, X.W., Hou, M.Z., Yang, F., Fu, Y.X., Li, X.F., Chen, J.Y., Yu, K.X., Shao, D.H.
• Format: Article
• Language: English
• Subjects: Antiferroelectric; Energy storage; PLZT films; Zr/Ti ratio
• ISSN: 0378-7753
• DOI: 10.1016/j.jpowsour.2024.235843

Antiferroelectric (AFE) materials attract widespread attention due to their unique behavior under electric field. In this work, the Pb0.82La0.12(ZrxTi1-x)O3 (PLZT) films with Zr/Ti ratios close to the AFE region are deposited on the LaNiO3/SiO2/Si substrate through chemical deposition method. The dielectric, leakage, and ferroelectric performance of PLZT films are thoroughly examined. It can be concluded that the Zr content in PLZT films can effectively regulate their dielectric properties. At the same time, the increase of Zr/Ti ratio makes the double hysteresis loop of PLZT more obvious, leading to greater stability of the AFE phase, providing a significant advantage in energy storage. Notably, the PLZT film with a Zr/Ti ratio of 95/5 exhibits the highest recoverable energy storage density (Wrec) of 30.8 J/cm3 and energy storage efficiency (η) of 71.5 %. These results reveal that the Zr/Ti ratio in PLZT antiferroelectric films plays a critical role in enhancing their energy storage performance. •PLZT films with different Zr/Ti ratios are investigated.•The best energy storage performance achieving Wrec of 30.8 J/cm3 and η of 71.5 %.•The stability of antiferroelectric can be improved by increasing the Zr/Ti ratio.•The high switching field benefits energy storage performance in antiferroelectric.