Visible light active Fe2O3/SnS heterojunction decorated with graphene oxide layer for improved photoelectrochemical performance

• Published in: Journal of solid state chemistry 2023-05, Vol.321, p.123915, Article 123915
• Main Authors: Yadav, Jyoti, Sharma, Dipika, Mehta, Bodh Raj
• Format: Article
• Language: English
• Subjects: Heterojunction; Photoelectrochemical (PEC) water splitting; Rf sputtering; Solar hydrogen; Thermal evaporation
• ISSN: 0022-4596; 1095-726X
• DOI: 10.1016/j.jssc.2023.123915

Tin monosulfide, also known as SnS, is a significant IV-VI group semiconductor that has acquired considerable emphasis owing to its good absorption in visible range. In the present work, nanostructured thin films of pure SnS, Fe2O3, and Fe2O3/SnS heterojunction were synthesized using cost effective thermal evaporation and Rf sputtering method, respectively. Furthermore, to enhance the sample's photoelectrochemical activity, a homogenous thin film of graphene oxide (GO) is coated on Fe2O3/SnS heterojunction sample. All samples were well characterized and their photoelectrochemical response was investigated. The maximum photocurrent density was observed for Fe2O3/SnS/GO heterojunction i.e. 1.0 ​mA/cm2 which is much higher than pure SnS (0.3 ​mA/cm2) and Fe2O3 (0.02 ​mA/cm2) at 0.95 ​V vs. Ag/AgCl. The role of graphene layer is being examined for the improved photoresponse. Remarkable photoresponse and stability of the Fe2O3/SnS/GO heterojunction sample may be attributed to better charge separation at the interfacial junction of SnS and Fe2O3 and excellent electron density of GO layer. [Display omitted] •Thin films of SnS and Fe2O3 were deposited using thermal evaporation method and RF sputtering method.•Enhanced absorbance and PEC water splitting response was observed in Fe2O3/SnS/GO heterojunction.•Fe2O3/SnS/GO heterojunction have highest photocurrent density of 1.0 ​mA/cm2.•Fe2O3/SnS/GO sample exhibited less charge transfer resistance and high flatband potential.