High quality GaN epitaxial layers grown by modulated beam growth method

High quality GaN epitaxial layers are grown by modulated beam growth method. It is found that we can achieve a smaller X-ray diffraction full-width-half-maximum, a much stronger photoluminescence intensity and a much smaller vertical striations from the GaN epitaxial layers grown under Ga flux modul...

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Bibliographic Details
Published in:Materials chemistry and physics 2004-07, Vol.86 (1), p.161-164
Main Authors: Liu, K.T, Tezuka, T, Sugita, S, Watari, Y, Horikoshi, Y, Su, Y.K, Chang, S.J
Format: Article
Language:English
Subjects:
Modulated beam growth
RF–MBE
SEM
Stoichiometric growth
XRD
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Summary:High quality GaN epitaxial layers are grown by modulated beam growth method. It is found that we can achieve a smaller X-ray diffraction full-width-half-maximum, a much stronger photoluminescence intensity and a much smaller vertical striations from the GaN epitaxial layers grown under Ga flux modulation method. These observations can all be attributed to the enhanced lateral growth of the modulated beam growth method.
ISSN:0254-0584
1879-3312
DOI:10.1016/j.matchemphys.2004.02.027