Photoluminescence in manganese indium sulphide thin films deposited by chemical spray pyrolysis

Photoluminescence measurements on manganese indium sulphide thin films were carried out and the temperature dependence of the Pl emission band was studied. A Gaussian shaped Pl band centered at 535 nm was observed at 10 K. A study on the variation of InCl 3 concentration in spray solution over the P...

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Bibliographic Details
Published in:Materials chemistry and physics 2005-07, Vol.92 (1), p.240-244
Main Authors: Sharma, R.K., Lakshmikumar, S.T., Singh, Gurmeet, Rastogi, A.C.
Format: Article
Language:English
Subjects:
MnIn 2S 4
Photoluminescence
Spray deposition
Thin film
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Summary:Photoluminescence measurements on manganese indium sulphide thin films were carried out and the temperature dependence of the Pl emission band was studied. A Gaussian shaped Pl band centered at 535 nm was observed at 10 K. A study on the variation of InCl 3 concentration in spray solution over the Pl energy band position and shape suggests that varying InCl 3 concentration in the solution or by changing the In 3+ composition in the film during growth does not affect Pl maxima position on energy axis whereas a reduction in the Pl peak intensity was noticed with decreasing InCl 3 solution concentration. Based on the luminescence data donor level height in the manganese indium sulphide energy gap was estimated and found to be around 20 meV; that again on reduction in InCl 3 concentration in solution found to decreases marginally.
ISSN:0254-0584
1879-3312
DOI:10.1016/j.matchemphys.2005.01.018