Electrical conductivity tuning in p-type transparent conducting AgGaO2 and in quaternary AgInGaO2 thin films

We report tuning of electrical conductivity in a wide range from 10−2 to 10+3 S/m in p-type transparent conducting thin films of silver gallium oxide and in the quaternary films of silver indium gallium oxide. The conductivity tailoring is correlated with changes in carrier concentration and mobilit...

Full description

Saved in:
Bibliographic Details
Published in:Materials chemistry and physics 2020-02, Vol.242, p.122506, Article 122506
Main Authors: K, Keerthi, Rahman, Hilal, Jacob, Rajani, D, Benoy M., Philip, Rachel Reena
Format: Article
Language:English
Subjects:
Amorphous films
Crystalline films
Electrical properties
Optical properties
Transparent conducting oxides
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:We report tuning of electrical conductivity in a wide range from 10−2 to 10+3 S/m in p-type transparent conducting thin films of silver gallium oxide and in the quaternary films of silver indium gallium oxide. The conductivity tailoring is correlated with changes in carrier concentration and mobility induced by compositional variations and indium incorporation. The achievement of crystallization of the films at a temperature ~623 ± 5 K, the lowest temperature of crystallization for AGO so far reported, enhances the technological importance of the study. Tuning of optical band gap from 3.62 eV to 3.77 eV for AIGO and 3.98 eV–4.01 eV for AGO is realized by adjusting the composition. •This is the first report seen in literature on AgInGaO2.•Band gap and electrical conductivity tuning by compositional variations.•Three orders magnitude increase in electrical conductivity by quaternary formation.
ISSN:0254-0584
1879-3312
DOI:10.1016/j.matchemphys.2019.122506