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Synthesis and optimization of SnS absorber layer by spin-coating process and Taguchi approach

In this paper, a synthesis of SnS thin films using sol-gel spin coating method and optimization of the parameters influencing the experimental process. Taguchi experiment design with a L9(34) orthogonal array was used to optimize several parameters such as the annealing temperature, annealing time,...

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Bibliographic Details
Published in:Materials chemistry and physics 2022-12, Vol.292, p.126774, Article 126774
Main Authors: Garmim, T., Benaissa, N., Louardi, C., Soussi, L., Mghaiouini, R., Ziti, A., El Jouad, Z., Louardi, A., El Bachiri, A., Hartiti, B., Monkade, M.
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Language:English
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Summary:In this paper, a synthesis of SnS thin films using sol-gel spin coating method and optimization of the parameters influencing the experimental process. Taguchi experiment design with a L9(34) orthogonal array was used to optimize several parameters such as the annealing temperature, annealing time, concentration, and [S]/[Sn] ratio. To perform the necessary tests three levels of each factor were chosen. The analysis of variance (ANOVA) and signal-to-noise (S/N) was used to obtain the good optical properties (optimal band-gap) at the best combination of choosing factors. The obtained results indicate that the most influencing factors in the preparation of SnS thin films are the concentration and the [S]/[Sn] ratio. To confirm the results obtained, the test validation was performed using the optimal conditions. SnS thin films obtained at optimal condition were analyzed using X-Ray diffraction, UV–visible spectrophotometer, scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDS), and four-point probe. •Synthesis of SnS thin films by sol gel spin-coating method.•Application of Taguchi method to optimize the sol gel spin coating process.•The statistical analysis (ANOVA) has the capacity to give information about certain statistical parameters.•The SnS thin film obtained with optimal parameters has good properties.
ISSN:0254-0584
1879-3312
DOI:10.1016/j.matchemphys.2022.126774