Selenization-induced [001]-oriented Sb2Se3 film formation and its photo-sensing characteristics

• Published in: Materials chemistry and physics 2024-08, Vol.322, p.129571, Article 129571
• Main Authors: Anandan, Rohini, Xavier, Thatheyus Peter, Piraviperumal, Malar
• Format: Article
• Language: English
• Subjects: Photoactive materials; Photosensing; Sb2Se3; Selenization; Solar absorber
• ISSN: 0254-0584; 1879-3312
• DOI: 10.1016/j.matchemphys.2024.129571

Antimony selenide (Sb2Se3) is emerging as a promising material for optoelectronic applications owing to its exceptional properties. Achieving c-axis oriented [001] Sb2Se3 films, which is crucial for optimizing charge carrier transport has consistently been challenging. In this work, a facile route involving reactive selenization of antimony films deposited on glass substrates via thermal evaporation was employed to obtain [001] oriented Sb2Se3 thin films. The resultant films were comprehensively characterized using X-ray diffraction, field emission scanning electron microscopy, and energy-dispersive X-ray spectroscopy to confirm phase purity and compositional homogeneity, elucidating the role of selenization temperature in the formation of Sb2Se3 through this method. XPS analysis was carried out to confirm the oxidation states of Sb and Se. Optical analysis revealed a high absorption coefficient of ∼1.75 × 105 cm−1 with the desired direct band gap values in the range of 1.23 eV–1.20 eV. All these favourable properties, steered to observe a photocurrent of 143 nA at a 5V applied bias in 375°C selenized films under AM1.5 G illumination conditions. An n-Si/Sb2Se3 heterojunction was fabricated and a photocurrent of 2.8 μA was observed with responsivity and detectivity values of 8.18 × 10−5 A/W and 4.26 × 109 Jones respectively at zero applied bias and AM1.5 illumination conditions, showing the favourable prospects of Sb2Se3 thin films prepared via the selenization of antimony films in optoelectronic applications. [Display omitted] •Selenization induced Sb2Se3 films.•[001] Oriented films for easy charge carrier transportation.•High optical absorption coefficient.•Strong photosensing properties.•Self-biased photo detecting n-Si/Sb2Se3 heterojunction.