Ta2O5-based high-K dielectric thin films from solution processed at low temperatures

•Ta2O5–Al2O3–SiO2 (Ta:Al:Si=8:1:1 atomic ratio) and Ta2O5 films were processed from solutions.•The XRD-amorphous films, heated at or below 400°C, are smooth (RMS

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Bibliographic Details
Published in:Materials research bulletin 2014-02, Vol.50, p.323-328
Main Authors: Frunză, Raluca C., Kmet, Brigita, Jankovec, Marko, Topič, Marko, Malič, Barbara
Format: Article
Language:English
Subjects:
A. Amorphous materials
A. Thin films
B. Sol–gel chemistry
C. Atomic force microscopy
D. Electrical properties
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Description
Summary:•Ta2O5–Al2O3–SiO2 (Ta:Al:Si=8:1:1 atomic ratio) and Ta2O5 films were processed from solutions.•The XRD-amorphous films, heated at or below 400°C, are smooth (RMS
ISSN:0025-5408
1873-4227
DOI:10.1016/j.materresbull.2013.11.025