High nitrogen composition–induced low interfacial roughness of GaAs 0.978 N 0.022 /GaAs multiple quantum wells grown through solid-source molecular beam epitaxy

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Bibliographic Details
Published in:Materials research bulletin 2017-04, Vol.88, p.242-247
Main Authors: Biswas, Mahitosh, Tongbram, Binita, Shinde, Nilesh, Makkar, Roshan Lal, Bhatnagar, Anuj, Chakrabarti, Subhananda
Format: Article
Language:English
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ISSN:0025-5408
DOI:10.1016/j.materresbull.2016.12.032