Ge2Sb2Te5 and PbZr0.30Ti0.70O3 composite films for application in phase change random access memory

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Bibliographic Details
Published in:Materials letters 2010-02, Vol.64 (3), p.317-319
Main Authors: Song, Sannian, Song, Zhitang, Liu, Bo, Wu, Liangcai, Feng, Songlin
Format: Article
Language:English
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ISSN:0167-577X
DOI:10.1016/j.matlet.2009.11.001