A study on characterization of Al/ZnS/p-Si/Al heterojunction diode synthesized by sol–gel technique

• Published in: Materials letters 2013-07, Vol.102-103, p.106-108
• Main Authors: Turgut, Güven, Fahri Keskenler, E., Aydın, Serdar, Doğan, Seydi, Duman, Songül, Sönmez, Erdal, Esen, Bayram, Düzgün, Bahattin
• Format: Article
• Language: English
• Subjects: aluminum; Atomic force microscopy; coatings; Contacts; electrical properties; Sol–gel preparation; Thin films
• ISSN: 0167-577X; 1873-4979
• DOI: 10.1016/j.matlet.2013.03.125

In this paper, we investigated the morphological, optical and electrical properties of sol–gel spin coated ZnS film and device performance of fabricated Al/ZnS/p-Si/Al heterojunction diode. AFM images showed that surface morphology of the film was smooth which had 2.17nm surface rougness, almost homogenous and dense. The optical band gap value of the ZnS film was found to be 3.83eV. From electrical studies, it was found that Al/ZnS/p-Si/Al heterojunction diode showed a rectification behavior; and its ideality factor, barrier height and the series resistance values were calculated to be 2.34, 0.77eV and 12.3–12.5kΩ respectively. The results show that Al/ZnS/p-Si/Al diode is successfully fabricated using the sol–gel spin coating technique. •Al/ZnS/p-Si/Al heterojunction diode has been grown via sol–gel spin coating technique.•Morphological, optical and electrical characterization of ZnS material has been investigated.•ZnS/p-Si heterojunction diode structure has showed a rectification behavior and barrier height and ideality factor have been found as 0.77eV and 2.34, respectively.