Sn–ZnO nanoneedles grown on Zn wire as a pointed field emitter and switching device

Sn–ZnO nanoneedles were grown by cathodic electrodeposition and an annealing process on Zn wire as a substrate. Scanning electron microscope studies showed the formation of ZnO nanoneedles. From the field emission studies, the field required to draw an emission current density of ~15.2mA/cm2 was obs...

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Bibliographic Details
Published in:Materials letters 2013-11, Vol.111, p.181-184
Main Authors: Jamali-Sheini, Farid, Yousefi, Ramin, More, Mahendra A., Joag, Dilip S.
Format: Article
Language:English
Subjects:
annealing
Electrodeposition
Nanocrystalline materials
Optical materials and properties
scanning electron microscopes
Semiconductors
zinc
zinc oxide
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Summary:Sn–ZnO nanoneedles were grown by cathodic electrodeposition and an annealing process on Zn wire as a substrate. Scanning electron microscope studies showed the formation of ZnO nanoneedles. From the field emission studies, the field required to draw an emission current density of ~15.2mA/cm2 was observed at an applied field of ~0.14V/μm. In addition, field emission behavior of specimen grown on wire substrate demonstrates the applicability of Sn–ZnO as an electron current source with small optical size and switching device. The observed results suggest the suitability of this synthesis route for fabrication of pointed emitter. [Display omitted] •Sn–ZnO nanoneedles have been synthesized on wire substrate.•Electrodeposition method and annealing process was used for growth of nanoneedles.•Field emission measurement of nanoneedles grown on wire substrate is found to be superior.•The results suggest the suitability of synthesis route for fabricating of pointed emitter.
ISSN:0167-577X
1873-4979
DOI:10.1016/j.matlet.2013.08.073