Effect of hydrogen at room temperature on electronic and mechanical properties of dislocations in silicon

Hydrogen was found to have a significant impact even at room temperature on both electronic and mechanical properties of silicon. The local deep trap level of dislocation without hydrogen shifts significantly to a level shallower than reported before and plastic deformation near the surface takes pl...

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Bibliographic Details
Published in:Materials letters 2014-04, Vol.120, p.236-238
Main Authors: Ogawa, Masatoshi, Kamiya, Shoji, Izumi, Hayato, Tokuda, Yutaka
Format: Article
Language:English
Subjects:
Defects
Deformation and fracture
Electrical properties
Semiconductors
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Summary:Hydrogen was found to have a significant impact even at room temperature on both electronic and mechanical properties of silicon. The local deep trap level of dislocation without hydrogen shifts significantly to a level shallower than reported before and plastic deformation near the surface takes place more easily with hydrogen. The former was confirmed as the change in trap levels before and after a mild heat treatment in different gas environments, while the latter was observed with the instrumented indentation test after being boiled in water. Silicon would mechanically interact with hydrogen at a temperature far lower than ever known, whose influence is also seen electronically. •Deep trap level of dislocations in silicon changes with and without hydrogen.•Desorption of hydrogen from dislocations takes place with a heat treatment at 350K.•Dislocation mobility at room temperature is significantly increased with hydrogen.
ISSN:0167-577X
1873-4979
DOI:10.1016/j.matlet.2014.01.014