Growth of Cu2ZnSnSe4 and Cu2FeSnSe4 thin films by AACVD from molecular precursors

Phase pure Cu2ZnSnSe4 (CZTSe) and Cu2FeSnSe4 (CFTSe) thin films have been deposited onto glass substrates by Aerosol Assisted Chemical Vapour Deposition (AACVD) using mixtures of (triphenylphosphine)(tetraphenyldiselenoimidodiphosphinato)copper(I) [Cu(PPh3)[Ph2P(Se)N(Se)PPh2]], tris(2,4-pentanediona...

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Bibliographic Details
Published in:Materials letters 2015-08, Vol.152, p.60-64
Main Authors: Kevin, Punarja, Malik, Sajid N., Malik, Mohammad Azad, O׳Brien, Paul
Format: Article
Language:English
Subjects:
Chemical vapour deposition
Cu2FeSnSe4
Cu2ZnSnSe4
Molecular precursors
Thin films
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Summary:Phase pure Cu2ZnSnSe4 (CZTSe) and Cu2FeSnSe4 (CFTSe) thin films have been deposited onto glass substrates by Aerosol Assisted Chemical Vapour Deposition (AACVD) using mixtures of (triphenylphosphine)(tetraphenyldiselenoimidodiphosphinato)copper(I) [Cu(PPh3)[Ph2P(Se)N(Se)PPh2]], tris(2,4-pentanedionato)iron(III) [Fe(acac)3], tin(IV) acetate [Sn(OAc)4] and bis(2,4-pentanedionato)zinc(II) [Zn(acac)2]. Structure, morphology and optical properties of the deposited films were studied. The band gaps of CZTSe and CFTSe films were found to be between 1.0 and 1.2eV. •The AACVD deposition of Cu2ZnSnSe4 and Cu2FeSnSe4 thin films has been carried out.•Variation in micro-structure of deposited materials was observed at different deposition temperatures.•The as deposited Cu2ZnSnSe4 and Cu2FeSnSe4 thin films had band gap between 1.0 and 1.2eV.
ISSN:0167-577X
1873-4979
DOI:10.1016/j.matlet.2015.03.087